By Peter W. Hawkes (Ed.)
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Additional resources for Advances in Electronics and Electron Physics, Vol. 72
In the case of r,-related subbands an in-plane electric field will induce inter-subband transitions since x, y and z motions as well as spin and orbital variables are admixed, even at F = 0. This particular configuration has not been much studied to our knowledge. ii. Longitudinal Electric Field (F // z) Restricting again our considerations to r,-related subbands and considering a quantum well configuration, we separate the electronic energy E into a longitudinal (E,) and a transverse (q)parts.
In-plane dispersion relations of r,-related states in GaAs-Ga,,,AI,,,As single quantum wells ( L = 100 8, and L = 150 A respectively) in the axial approximation. The dashed lines correspond to the diagonal approximation while the solid lines account for the off-diagonal terms in the Luttinger hamiltonian. After Bastard and Brum (1986). provided by the HgTe-CdTe heterostructures where the y’s change sign at the iriterfaces (see Section VI). To illustrate the previous method we show in Fig. 16 the in-plane dispersions of r,-related states for two GaAs-Gal -,Al,As rectangular quantum wells.
For electron energies larger than Vs the electrons are in propagating states in both kinds of layers. The energy zero is set at the Tspoint of GaAs. After Bastard (1988). 7. The bandwidth of the ground ( E , ) superlattice subband for electrons in GaAs. Ga,,,AI,,,As superlattices is plotted versus the barrier thickness L , for three different GaAs slab thicknesses: LA = 30 A, 50 A and 100 A respectively. After Bastard (1988). OPTICAL CHARACTERIZATION OF SEMICONDUCTOR HETEROLAYERS 21 When the barriers become thick enough to suppress the tunnel coupling between the wells, the superlattice states tend towards the discrete bound states supported by isolated single wells.
Advances in Electronics and Electron Physics, Vol. 72 by Peter W. Hawkes (Ed.)
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